PSMN7R6-60PS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN7R6-60PS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 149 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 92 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 38.7 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
Тип корпуса: TO220AB
Аналог (замена) для PSMN7R6-60PS
PSMN7R6-60PS Datasheet (PDF)
psmn7r6-60ps.pdf
PSMN7R6-60PSN-channel 60 V 7.8 m standard level MOSFETRev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn7r6-60ps.pdf
isc N-Channel MOSFET Transistor PSMN7R6-60PSFEATURESDrain Current : I = 65A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
psmn7r6-60xs.pdf
PSMN7R6-60XSN-channel 60 V 7.8 m standard level MOSFET in TO220F(SOT186A)16 December 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and power supply equipment.2. Features and benefits High efficiency
psmn7r6-60bs.pdf
PSMN7R6-60BSN-channel 60 V 7.8 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie
psmn7r6-100bse.pdf
PSMN7R6-100BSEN-channel 100 V 7.6 m standard level MOSFET in D2PAK18 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whilst
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLS7G3135L-350P | JST2302H
History: BLS7G3135L-350P | JST2302H
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918