APT1002R4CN Datasheet. Specs and Replacement

Type Designator: APT1002R4CN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO254

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APT1002R4CN datasheet

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 apt1002r4bnr apt1002rbnr.pdf pdf_icon

APT1002R4CN

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APT1002R4CN

D TO-247 G APT1002RBN 1000V 7.0A 2.00 S APT1002R4BN 1000V 6.5A 2.40 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1002RBN 1002R4BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 7.0 6.5 Amps IDM Pulsed Drain Current 1... See More ⇒

 6.1. Size:49K  apt
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APT1002R4CN

D TO-254 G APT1002RCN 1000V 5.5A 2.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1002RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 5.5 Amps IDM Pulsed Drain Current 1 22 VGS Gate-Source Voltage 30 Volts Total Powe... See More ⇒

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Detailed specifications: APT1001RBVR, APT1001RSVR, APT10025JVFR, APT10025JVR, APT10025PVR, APT10026JN, APT1002R4AN, APT1002R4BN, IRLB4132, APT1002RAN, APT1002RBN, APT1002RCN, APT1003R5AN, APT1003R5BN, APT1003R5CN, APT1003R5GN, APT10043JVR

Keywords - APT1002R4CN MOSFET specs

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