SI2302DS Specs and Replacement
Type Designator: SI2302DS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO236AB
SI2302DS substitution
- MOSFET ⓘ Cross-Reference Search
SI2302DS datasheet
si2302ds.pdf
SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability SI2302DS in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa... See More ⇒
si2302ds.pdf
Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 20 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "8 TA= 25_... See More ⇒
si2302ds.pdf
SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 Features 3 VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr... See More ⇒
si2302ds-3.pdf
SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un... See More ⇒
Detailed specifications: PSMN8R7-80PS, PSMN9R0-25YLC, PSMN9R0-30LL, PSMN9R0-30YL, PSMN9R1-30YL, PSMN9R5-100PS, PSMN9R5-100XS, PSMN9R5-30YLC, 2N7000, SI2304DS, IRF630FP, IRF630M, STB100NF03L-03, STB100NF04, STB10NK60Z, STB11N52K3, STB11NK40Z
Keywords - SI2302DS MOSFET specs
SI2302DS cross reference
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SI2302DS substitution
SI2302DS replacement
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History: NCE4801 | BLP04N08-B
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