APT1002RBN MOSFET Datasheet: N-Ch, 1000V, 7A. Full specification with pinout and replacement list

APT1002RBN Specs and Replacement

Type Designator: APT1002RBN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO247

APT1002RBN substitution

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APT1002RBN datasheet

0.1. Size:81K apt
apt1002r4bnr apt1002rbnr.pdf pdf_icon

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6.1. Size:49K apt
apt1002rcn.pdf pdf_icon

D TO-254 G APT1002RCN 1000V 5.5A 2.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1002RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 5.5 Amps IDM Pulsed Drain Current 1 22 VGS Gate-Source Voltage 30 Volts Total Powe... See More ⇒

6.2. Size:50K apt
apt1002r4bn.pdf pdf_icon

D TO-247 G APT1002RBN 1000V 7.0A 2.00 S APT1002R4BN 1000V 6.5A 2.40 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1002RBN 1002R4BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 7.0 6.5 Amps IDM Pulsed Drain Current 1... See More ⇒

Detailed specifications: APT10025JVFR , APT10025JVR , APT10025PVR , APT10026JN , APT1002R4AN , APT1002R4BN , APT1002R4CN , APT1002RAN , 13N50 , APT1002RCN , APT1003R5AN , APT1003R5BN , APT1003R5CN , APT1003R5GN , APT10043JVR , APT1004R2AN , APT1004R2BN .