STB180N55F3
MOSFET. Datasheet pdf. Equivalent
Type Designator: STB180N55F3
Marking Code: 180N55F3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 330
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 105
nC
trⓘ - Rise Time: 150
nS
Cossⓘ -
Output Capacitance: 1450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package:
D2PAK
STB180N55F3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STB180N55F3
Datasheet (PDF)
..1. Size:448K st
stb180n55f3 stp180n55f3.pdf
STB180N55F3STP180N55F3N-channel 55V - 3.2m - 120A - D2PAK/TO-220STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB180N55F3 55V 3.5m 120A(1) 330WSTP180N55F3 55V 3.8m 120A(1) 330W1. Value limited by wire bonding 33121 Ultra low on-resistance 100% avalanche tested TO-220 D2PAKDescriptionThis n-channel enhancement mode Power MOSFET is the l
9.1. Size:1107K st
stb18nf25 std18nf25.pdf
STB18NF25STD18NF25N-channel 250 V, 0.14 , 17 A DPAK, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PTOTmaxSTB18NF25 250 V
9.2. Size:963K st
stb18nm80 stf18nm80 stw18nm80 stp18nm80.pdf
STB18NM80, STF18NM80STP18NM80, STW18NM80N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max33 22 1STB18NM80 800 V
9.3. Size:1015K st
stb18n65m5 std18n65m5.pdf
STB18N65M5, STD18N65M5N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in DPAK and DPAK packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTABTJmax maxTABSTB18N65M5710 V
9.4. Size:1200K st
stb18n60m2 stp18n60m2 stw18n60m2.pdf
STB18N60M2, STP18N60M2, STW18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 3 Order codes ID1 TJmax max2D PAKSTB18N60M2STP18N60M2 650 V 0.28 13 ATABSTW18N60M2 Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation
9.5. Size:1048K st
stb18nm80 stf18nm80 stp18nm80 stw18nm80.pdf
STB18NM80, STF18NM80, STP18NM80, STW18NM80N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesRDS(on) Order codes VDSS max ID3321STB18NM80 800 V
9.6. Size:338K st
stb185n55f3 stp185n55f3.pdf
STB185N55F3STP185N55F3N-channel 55V - 3.2m - 120A - D2PAK/TO-220STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB185N55F3 55V 3.5m 120A(1) 330WSTP185N55F3 55V 3.8m 120A(1) 330W1. Value limited by wire bonding 33 Ultra low on-resistance121 100% avalanche testedTO-220 D2PAKDescriptionThis n-channel enhancement mode Power MOSFET is the
9.7. Size:126K st
stb18n20.pdf
STB18N20N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB18N20 200 V
9.8. Size:1417K st
stb18nm60nd stf18nm60nd stp18nm60nd stw18nm60nd.pdf
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60NDN-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) IDOrder codes3TJmaxmax132STB18NM60NDD2PAK 1TO-220FPSTF18NM60ND650 V
9.9. Size:995K st
stb18nm60n stf18nm60n sti18nm60n stp18nm60n stw18nm60n.pdf
STB18NM60N, STF18NM60N, STI18NM60NSTP18NM60N, STW18NM60NN-channel 600 V, 0.27 , 13 A MDmesh II Power MOSFETin TO-220, TO-220FP, TO-247, DPAK and IPAKFeaturesVDSS RDS(on) Order codes ID PW(@Tjmax) max.3312STB18NM60N 110 W 1DPAKSTF18NM60N 30 WTO-24732STI18NM60N 650 V
9.10. Size:1247K st
stb18n55m5 std18n55m5 stf18n55m5 stp18n55m5.pdf
STB18N55M5, STD18N55M5STF18N55M5, STP18N55M5N-channel 550 V, 0.18 , 13 A, MDmesh V Power MOSFETin DPAK, DPAK, TO-220FP and TO-220FeaturesVDSS RDS(on) Order codes ID3@TJmax max131STB18N55M5DPAKDPAKSTD18N55M5550 V
9.11. Size:887K st
stb18nf30.pdf
STB18NF30N-channel 330 V, 160 m, 18 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STB18NF30 330 V 180 m 18 A TAB 100% avalanche tested 175 C junction temperature31ApplicationsDPAK Switching applications AutomotiveDescriptionThis Power MOSFET has been developed using Figu
9.12. Size:1158K st
stb18nm60n stf18nm60n stp18nm60n stw18nm60n.pdf
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60NN-channel 600 V, 0.26 typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeaturesTABVDSS RDS(on) Order codes ID PTOT(@Tjmax) max.3132STB18NM60N 110 W1DPAKSTF18NM60N 30 WTO-220FP650 V
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