STB20NM60 Datasheet and Replacement
Type Designator: STB20NM60
Marking Code: B20NM60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 39 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: D2PAK
STB20NM60 substitution
STB20NM60 Datasheet (PDF)
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stb20nm60-1 stb20nm60t4.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stb20nm60d.pdf

STB20NM60DN-channel 600V - 0.26 - 20A - D2PAKFDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTB20NM60D 600V
Datasheet: STB18NM60N , STB18NM80 , STB190NF04 , STB19NF20 , STB200N4F3 , STB200N6F3 , STB200NF03 , STB20NM50FD , AON6380 , STB20NM60D , STB21N65M5 , STB21NK50Z , STB21NM60ND , STB22NM60N , STB22NS25Z , STB230NH03L , STB23NM50N .
Keywords - STB20NM60 MOSFET datasheet
STB20NM60 cross reference
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