STB23NM50N MOSFET Datasheet: N-Ch, 500V, 17A. Full specification with pinout and replacement list

STB23NM50N Specs and Replacement

Type Designator: STB23NM50N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: D2PAK

STB23NM50N substitution

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STB23NM50N datasheet

..1. Size:757K st
stb23nm50n stf23nm50n stp23nm50n stw23nm50n.pdf pdf_icon

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..2. Size:203K inchange semiconductor
stb23nm50n.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB23NM50N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

7.1. Size:560K st
stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf pdf_icon

STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB23NM60N 19 A D PAK I PAK STI23NM60N 19 A 3 STF23NM60N 650 V 0.180 19 A (1) 2 1 STP23NM60N 19 A TO-247 STW23NM60N 19 A 3 3 2 2 1 1 1. Limited ... See More ⇒

7.2. Size:814K st
stb23nm60nd sti23nm60nd stf23nm60nd stp23nm60nd stw23nm60nd.pdf pdf_icon

STx23NM60ND N-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET (with fast diode) D PAK, I PAK, TO-220, TO-220FP, TO-247 Features VDSS RDS(on) Type ID 3 max. 3 (@Tjmax) 1 2 1 STx23NM60ND 650 V ... See More ⇒