STB23NM50N MOSFET. Datasheet pdf. Equivalent

   Type Designator: STB23NM50N
   Marking Code: 23NM50N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: D2PAK

STB23NM50N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS