STB24NM65N Specs and Replacement

Type Designator: STB24NM65N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: D2PAK

STB24NM65N substitution

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STB24NM65N datasheet

 6.1. Size:878K  st
stb24nm60n.pdf pdf_icon

STB24NM65N

STB24NM60N N-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFET D PAK Features VDSS RDS(on) Order codes ID (@Tjmax) max. STB24NM60N 650 V ... See More ⇒

 6.2. Size:203K  inchange semiconductor
stb24nm60n.pdf pdf_icon

STB24NM65N

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STB24NM60N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 8.1. Size:419K  st
stb24nf10 stp24nf10.pdf pdf_icon

STB24NM65N

STB24NF10 STP24NF10 N-channel 100V - 0.0055 - 26A - TO-220 - D PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB24NF10 100V ... See More ⇒

Detailed specifications: STB21NK50Z, STB21NM60ND, STB22NM60N, STB22NS25Z, STB230NH03L, STB23NM50N, STB23NM60ND, STB24NM60N, IRFZ46N, STB25NM50N, STB25NM60ND, STB26NM60N, STB270N4F3, STB28NM50N, STB300NH02L, STB30N65M5, STB30NF10

Keywords - STB24NM65N MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.