STB24NM65N Datasheet and Replacement
Type Designator: STB24NM65N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: D2PAK
- MOSFET Cross-Reference Search
STB24NM65N Datasheet (PDF)
stb24nm65n sti24nm65n stf24nm65n stp24nm65n stw24nm65n.pdf

STW24NM65N-STI24NM65N-STF24NM65NSTB24NM65N - STP24NM65NN-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D2PAKI2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) max ID(@TJmax)323121STB24NM65N 710 V
stb24nm60n.pdf

STB24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETDPAKFeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STB24NM60N 650 V
stb24nm60n.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB24NM60NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
stb24nf10 stp24nf10.pdf

STB24NF10STP24NF10N-channel 100V - 0.0055 - 26A - TO-220 - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB24NF10 100V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMK25N80M3 | MTC2804Q8
Keywords - STB24NM65N MOSFET datasheet
STB24NM65N cross reference
STB24NM65N equivalent finder
STB24NM65N lookup
STB24NM65N substitution
STB24NM65N replacement
History: WMK25N80M3 | MTC2804Q8



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