STB30NF20 Specs and Replacement

Type Designator: STB30NF20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.7 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: D2PAK

STB30NF20 substitution

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STB30NF20 datasheet

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stp30nf20 stb30nf20 stw30nf20.pdf pdf_icon

STB30NF20

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me... See More ⇒

 ..2. Size:393K  st
stp30nf20 stw30nf20 stb30nf20.pdf pdf_icon

STB30NF20

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me... See More ⇒

 ..3. Size:355K  inchange semiconductor
stb30nf20.pdf pdf_icon

STB30NF20

isc N-Channel MOSFET Transistor STB30NF20 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

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stb30nf20l.pdf pdf_icon

STB30NF20

STB30NF20L N-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK package Datasheet production data Features Order code VDSS RDS(on) ID PTOT STB30NF20L 200 V 0.075 30 A 150 W TAB Gate charge minimized 100% avalanche tested 3 Excellent figure of merit (RDS* Qg) 1 Very good manufacturing repeatability D PAK Very low intrinsic capacitance App... See More ⇒

Detailed specifications: STB25NM50N, STB25NM60ND, STB26NM60N, STB270N4F3, STB28NM50N, STB300NH02L, STB30N65M5, STB30NF10, MMIS60R580P, STB30NM50N, STB30NM60ND, STB32N65M5, STB34NM60ND, STB35N65M5, STB35NF10, STB36NF06L, STB36NM60N

Keywords - STB30NF20 MOSFET specs

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