STB35NF10 Datasheet and Replacement
Type Designator: STB35NF10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: D2PAK
STB35NF10 substitution
STB35NF10 Datasheet (PDF)
stb35nf10 stp35nf10.pdf
STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V
stb35nf10t4.pdf
STB35NF10STP35NF10N-channel 100V - 0.030 - 40A - D2PAK/TO-220Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB35NF10 100V
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf
STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V
stb35n60dm2.pdf
STB35N60DM2 N-channel 600 V, 0.094 typ., 28 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code VDS ID PTOT TAB max. STB35N60DM2 600 V 0.110 28 A 210 W 3 Fast-recovery body diode 1 Extremely low gate charge and input capacitance Low on-resistance D2PAK 100% avalanche tested Extremely
Datasheet: STB30N65M5 , STB30NF10 , STB30NF20 , STB30NM50N , STB30NM60ND , STB32N65M5 , STB34NM60ND , STB35N65M5 , IRF730 , STB36NF06L , STB36NM60N , STB3N62K3 , STB3NK60Z , STB40NF10 , STB40NF10L , STB40NF20 , STB40NS15 .
History: STP10NK60ZFP
Keywords - STB35NF10 MOSFET datasheet
STB35NF10 cross reference
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STB35NF10 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STP10NK60ZFP
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