All MOSFET. STB6NK60Z Datasheet

 

STB6NK60Z Datasheet and Replacement


   Type Designator: STB6NK60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: D2PAK
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STB6NK60Z Datasheet (PDF)

 ..1. Size:448K  st
 stb6nk60z stb6nk60z-1 stp6nk60zfp stp6nk60z.pdf pdf_icon

STB6NK60Z

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

 0.1. Size:445K  st
 stb6nk60zt4 stp6nk60zfp.pdf pdf_icon

STB6NK60Z

STB6NK60Z - STB6NK60Z-1STP6NK60ZFP - STP6NK60ZN-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAKZener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PWSTB6NK60Z 600 V

 8.1. Size:481K  st
 stp6nk90z stp6nk90zfp stb6nk90z stw7nk90z.pdf pdf_icon

STB6NK60Z

STP6NK90Z - STP6NK90ZFPSTB6NK90Z - STW7NK90ZN-channel 900V - 1.56 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP6NK90Z 900 V

 8.2. Size:653K  st
 stb6nk90zt4 stp6nk90z stp6nk90zfp stw7nk90z.pdf pdf_icon

STB6NK60Z

STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90ZDatasheetN-channel 900 V, 1.56 typ., 5.8 A SuperMESH Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packagesFeaturesTABTAB3Order codes VDS RDS(on)max. ID123D PAKTO-220 21 STB6NK90ZT4STP6NK90Z900 V 2 5.8 ASTP6NK90ZFP32 STW7NK90Z312TO-220FPTO-2471 Extremely high dv/dt capability

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History: VBNC1303 | IRFS4010PBF

Keywords - STB6NK60Z MOSFET datasheet

 STB6NK60Z cross reference
 STB6NK60Z equivalent finder
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