STB80NF55L-06 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STB80NF55L-06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 55 V
   Maximum Gate-Source Voltage |Vgs|: 16 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
   Maximum Drain Current |Id|: 80 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 100 nC
   Rise Time (tr): 180 nS
   Drain-Source Capacitance (Cd): 1040 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
   Package: D2PAK

STB80NF55L-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STB80NF55L-06 Datasheet (PDF)

..1. Size:399K st
stb80nf55l-06 stp80nf55l-06.pdf

STB80NF55L-06STP80NF55L-06N-CHANNEL 55V - 0.005 - 80A DPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55L-06 55 V

2.1. Size:195K st
stb80nf55l-08.pdf

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1 TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESC

2.2. Size:195K st
stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf