STB8N65M5 PDF and Equivalents Search

 

STB8N65M5 Specs and Replacement

Type Designator: STB8N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: D2PAK

STB8N65M5 substitution

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STB8N65M5 datasheet

 9.1. Size:698K  st
stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STB8N65M5

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V ... See More ⇒

 9.2. Size:554K  st
stb8nm60t4 std5nm60-1 std5nm60t4 stp8nm60fp.pdf pdf_icon

STB8N65M5

STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V ... See More ⇒

Detailed specifications: STB80NF03L-04T4, STB80NF10, STB80NF55-08T4, STB80NF55L-06, STB80NF55L-08-1, STB80PF55, STB85NF3LL, STB85NF55, IRF530, STB8NM60, STB8NM60D, STB95N3LLH6, STB9NK50Z, STB9NK60Z, STB9NK60ZD, STB9NK70Z-1, STB9NK90Z

Keywords - STB8N65M5 MOSFET specs

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