STB8NM60D MOSFET Datasheet: N-Ch, 600V, 8A. Full specification with pinout and replacement list

STB8NM60D Specs and Replacement

Type Designator: STB8NM60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: D2PAK

STB8NM60D substitution

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STB8NM60D datasheet

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STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V ... See More ⇒

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STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type VDSS RDS(on) ID Pw 3 1 STD5NM60 650 V ... See More ⇒