STB9NK90Z Specs and Replacement
Type Designator: STB9NK90Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: D2PAK
STB9NK90Z substitution
STB9NK90Z Specs
stb9nk90z stf9nk90z stp9nk90z stw9nk90z.pdf
STB9NK90Z, STF9NK90Z STP9NK90Z, STW9NK90Z N-channel 900 V, 1.1 , 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max. 3 3 1 STB9NK90Z 160 W 2 1 D PAK TO-220 STW9NK90Z 160 W 900V ... See More ⇒
stp9nk70z stp9nk70zfp stb9nk70z stb9nk70z-1 stw9nk70z.pdf
STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1 - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP9NK70Z 700 V ... See More ⇒
stb9nk80z.pdf
STB9NK80Z Automotive-grade N-channel 800 V, 1.5 typ., 5.2 A Zener-protected SuperMESH Power MOSFETs in D2PAK package Datasheet - production data Features VDS RDS(on) Type ID TAB (@Tjmax) max. STB9NK80Z 800V 1.8 5.2A Designed for automotive applications and 3 AEC-Q101 qualified 1 Extremely high dv/dt capability D2PAK 100% avalanche tested Gate charge m... See More ⇒
stb9nk50z-1.pdf
STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V - 0.72 - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS(on) ID Pw STP9NK50Z 500 V ... See More ⇒
Detailed specifications: STB8N65M5 , STB8NM60 , STB8NM60D , STB95N3LLH6 , STB9NK50Z , STB9NK60Z , STB9NK60ZD , STB9NK70Z-1 , BS170 , STD100N3LF3 , STD10NF10 , STD10NM50N , STD10NM60N , STD10NM60ND , STD10NM65N , STD10PF06 , STD11NM50N .
Keywords - STB9NK90Z MOSFET specs
STB9NK90Z cross reference
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