All MOSFET. STD120N4F6 Datasheet

 

STD120N4F6 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD120N4F6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 65 nC

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: DPAK

STD120N4F6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD120N4F6 Datasheet (PDF)

0.1. std120n4f6 stp120n4f6 stb120n4f6.pdf Size:918K _st

STD120N4F6
STD120N4F6

STB120N4F6 STD120N4F6, STP120N4F6 N-channel 40 V, 4 mΩ , 80 A, DPAK, D²PAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features RDS(on) Type VDSS ID max. STB120N4F6 40 V 4 mΩ 80 A 3 STD120N4F6 40 V 4 mΩ 80 A 3 1 1 STP120N4F6 40 V 4.3 mΩ 80 A DPAK D²PAK ■ Standard threshold drive ■ 100% avalanche tested 3 2 1 TO-220 Application ■ Switching applications

6.1. stb120n4lf6 std120n4lf6.pdf Size:806K _st

STD120N4F6
STD120N4F6

STB120N4LF6 STD120N4LF6 N-channel 40 V, 4 mΩ, 80 A DPAK, D2PAK STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STB120N4LF6 40 V 4.0 mΩ 80 A STD120N4LF6 40 V 4.0 mΩ 80 A 3 3 1 1 ■ Logic level drive DPAK D²PAK ■ 100% avalanche tested Application ■ Switching applications – Automotive Figure 1. Internal schematic diagram

 9.1. std12nf06.pdf Size:443K _st

STD120N4F6
STD120N4F6

STD12NF06 N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD12NF06 60 V <0.1 Ω 12 A TYPICAL RDS(on) = 0.08Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 3 3 THROUGH-HOLE IPAK (TO-251) POWER 2 1 PACKAGE IN TUBE (SUFFIX “-1") 1 SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK POWER PACKAGE IN TAPE & REEL TO-251 TO-252 (SUFFIX “

9.2. std12nf06l.pdf Size:321K _st

STD120N4F6
STD120N4F6

STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V <0.1Ω 12A 3 3 STD12NF06L-1 60V <0.1Ω 12A 2 1 1 ■ Exceptional dv/dt capability DPAK IPAK ■ Low gate charge Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Internal

 9.3. std12nf06 std12nf06t4.pdf Size:335K _st

STD120N4F6
STD120N4F6

STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET Features VDSSS RDS(on) ID Type STD12NF06 60V <0.1Ω 12A 3 3 STD12NF06T4 60V <0.1Ω 12A 2 1 1 DPAK IPAK ■ Exceptional dv/dt capability ■ Low gate charge Applications ■ Switching application Figure 1. Internal schematic diagram Description This Power MOSFET is the latest deve

9.4. std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf Size:581K _st

STD120N4F6
STD120N4F6

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 Ω 11 A I²PAK TO-220 STD12NM50N 550 V 0.38 Ω 11 A 3 1 STI12NM50N 550 V 0.38 Ω 11 A DPAK STF12NM50N 550 V 0.38 Ω 11 A (1) STP12NM50N 5

 9.5. std12n05.pdf Size:177K _st

STD120N4F6
STD120N4F6

STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED IPAK D

9.6. std12nf06-1.pdf Size:333K _st

STD120N4F6
STD120N4F6

STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET Features VDSSS RDS(on) ID Type STD12NF06 60V <0.1Ω 12A 3 3 STD12NF06T4 60V <0.1Ω 12A 2 1 1 DPAK IPAK ■ Exceptional dv/dt capability ■ Low gate charge Applications ■ Switching application Figure 1. Internal schematic diagram Description This Power MOSFET is the latest deve

9.7. std12nf06l-1 std12nf06lt4.pdf Size:316K _st

STD120N4F6
STD120N4F6

STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V <0.1Ω 12A 3 3 STD12NF06L-1 60V <0.1Ω 12A 2 1 1 ■ Exceptional dv/dt capability DPAK IPAK ■ Low gate charge Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Internal

9.8. stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf Size:586K _st

STD120N4F6
STD120N4F6

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 Ω 11 A I²PAK TO-220 STD12NM50N 550 V 0.38 Ω 11 A 3 1 STI12NM50N 550 V 0.38 Ω 11 A DPAK STF12NM50N 550 V 0.38 Ω 11 A (1) STP12NM50N 5

9.9. std12n50m2.pdf Size:748K _st

STD120N4F6
STD120N4F6

STD12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STD12N50M2 500 V 0.38 Ω 10 A TAB • Extremely low gate charge 3 • Excellent output capacitance (COSS) profile 1 • 100% avalanche tested DPAK • Zener-protected Applications • Switching applications Figure 1. Int

9.10. std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf Size:1040K _st

STD120N4F6
STD120N4F6

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V < 0.43 Ω 8.5 A 70 W 1 STP12N65M5 8.5 A 70 W DPAK STU12N65M5 8.5 A 70 W 3 1. Limite

9.11. stb12nm50nd std12nm50nd stf12nm50nd.pdf Size:1025K _st

STD120N4F6
STD120N4F6

STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A 3 3 3 2 1 1 1 ■ 100% avalanche tested D2PAK DPAK TO-220FP ■ Low input capacitance and gate charge

9.12. std12n65m2.pdf Size:935K _st

STD120N4F6
STD120N4F6

STD12N65M2 N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 Ω 8 A  Extremely low gate charge  Excellent output capacitance (COSS) profile DPAK (TO-252)  100% avalanche tested  Zener-protected Figure 1: Internal schematic diagram Applicatio

9.13. std12n.pdf Size:176K _st

STD120N4F6
STD120N4F6

STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05L 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A TYPICAL R = 0.115 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE AP

9.14. std12ne06.pdf Size:106K _st

STD120N4F6
STD120N4F6

STD12NE06  N - CHANNEL 60V - 0.08Ω - 12A - DPAK SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06 60 V < 0.10 Ω 12 A TYPICAL R = 0.08 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES DPAK OFFICES TO-252

9.15. std127dt4.pdf Size:632K _st

STD120N4F6
STD120N4F6

STD127DT4 High voltage fast-switching NPN power transistor Datasheet - production data Features • NPN transistor • High voltage capability TAB • Low spread of dynamic parameters 3 • Minimum lot-to-lot spread for reliable operation 1 • Very high switching speed • Integrated anti-parallel collector - emitter diode DPAK Applications • Electronic ballast for fluoresce

9.16. std12ne06l.pdf Size:81K _st

STD120N4F6
STD120N4F6

STD12NE06L  N - CHANNEL 60V - 0.09Ω - 12A - DPAK SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06L 60 V < 0.12 Ω 12 A TYPICAL R = 0.09 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES DPAK OFFICES TO-252

9.17. std123uf.pdf Size:148K _auk

STD120N4F6
STD120N4F6

 STD123UF Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

9.18. std123asf.pdf Size:257K _auk

STD120N4F6
STD120N4F6

 STD123ASF NPN Silicon Transistor Features PIN Connection • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. 3 • Application for IRED Drive transistor in remote transmitter. 1 2 SOT-23F Ordering Information Type NO. Marking Package Code 12A □ STD123ASF SOT-23F ① ② ① Device Code ②

9.19. std129.pdf Size:53K _auk

STD120N4F6
STD120N4F6

 STD129 Semiconductor Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150mA) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO. Marking Package Code STD129 STD129 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25

9.20. std123.pdf Size:174K _auk

STD120N4F6
STD120N4F6

 STD123 NPN Silicon Transistor Features PIN Connection • Low saturation medium current application C • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability B • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) E TO-92 Ordering Information Type NO. Marking Package Code

9.21. std123sf.pdf Size:202K _auk

STD120N4F6
STD120N4F6

 STD123SF Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

9.22. std123u.pdf Size:245K _auk

STD120N4F6
STD120N4F6

 STD123U NPN Silicon Transistor Features PIN Connection • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability 3 • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) 1 2 SOT-323 Ordering Information Type NO. Marking Package Cod

9.23. std123s.pdf Size:246K _auk

STD120N4F6
STD120N4F6

 STD123S NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage PIN Connection • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Ordering Information C B Type No. Marking Package Code 123 □

9.24. std123as.pdf Size:256K _auk

STD120N4F6
STD120N4F6

 STD123AS NPN Silicon Transistor PIN Connection Features • High β& low saturation transistor. • hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. SOT-23 Ordering Information Type NO. Marking Package Code 12A □ STD123AS SOT-23 ① ② ①Device Code ②Year&Week Co

9.25. std123s.pdf Size:939K _htsemi

STD120N4F6
STD120N4F6

STD1 23S TRANSISTOR(NPN) SOT-23 FEATURES Low saturation medium current application 1. BASE Extremely low collector saturation voltage 2. EMITTER Suitable for low voltage large current drivers 3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Marking:123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

9.26. std123s.pdf Size:211K _lge

STD120N4F6
STD120N4F6

 STD123S SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Marking:123 Dimensions in inches and (millimeters) MA

9.27. std12l01.pdf Size:91K _samhop

STD120N4F6
STD120N4F6

Gre r r P Pr Pr Pro STD12L01 a S mHop Microelectronics C orp. Ver 1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 100V 12A 160 @ VGS=10V TO-251 Package. STD SERIES ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM R

9.28. std12l01a.pdf Size:90K _samhop

STD120N4F6
STD120N4F6

Gr P Pr P P STD12L01A a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 140 @ VGS=10V TO-251 Package. 12A 100V 170 @ VGS=4.5V STD SERIES ( ) TO - 251 I - PAK (TA=25°C unless otherwise noted) ABSOLUTE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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