All MOSFET. STD155N3LH6 Datasheet

 

STD155N3LH6 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD155N3LH6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 40 nC

Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm

Package: DPAK

STD155N3LH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD155N3LH6 Datasheet (PDF)

9.1. std15nf10t4.pdf Size:329K _st

STD155N3LH6
STD155N3LH6

STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET™ II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V < 0.065 Ω 23 A 3 1 ■ Exceptional dv/dt capability ■ 100% avalanche tested DPAK ■ Application oriented characterization Application ■ Switching applications Figure 1. Internal schematic diagram Description This MOSFET series re

9.2. std15nf10.pdf Size:331K _st

STD155N3LH6
STD155N3LH6

STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET™ II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V < 0.065 Ω 23 A 3 1 ■ Exceptional dv/dt capability ■ 100% avalanche tested DPAK ■ Application oriented characterization Application ■ Switching applications Figure 1. Internal schematic diagram Description This MOSFET series re

 9.3. std15n06-.pdf Size:168K _st

STD155N3LH6
STD155N3LH6

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V < 0.1 Ω 15 A TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPA

9.4. std15n65m5.pdf Size:1087K _st

STD155N3LH6
STD155N3LH6

STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V < 0.34 Ω 11 A STD15N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

 9.5. std15n.pdf Size:140K _st

STD155N3LH6
STD155N3LH6

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06L 60 V < 0.1 Ω 15 A TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK

9.6. std150n3llh6 stp150n3llh6 stu150n3llh6.pdf Size:945K _st

STD155N3LH6
STD155N3LH6

STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STD150N3LLH6 30 V 0.0028 Ω 80 A 3 3 2 STP150N3LLH6 30 V 0.0033 Ω 80 A 1 1 STu150N3LLH6 30 V 0.0033 Ω 80 A IPAK DPAK ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) 3 2 ■ Hi

9.7. std150nh02l-1 std150nh02lt4.pdf Size:516K _st

STD155N3LH6
STD155N3LH6

STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK™ - IPAK STripFET™ IlI Power MOSFET General features VDSSS RDS(on) ID Type STD150NH02L 24V <0.0035Ω 150A 3 3 STD150NH02L-1 24V <0.0035Ω 150A 2 1 1 ■ RDS(on) * Qg industry’s benchmark ClipPAKTM IPAK ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device Description Int

9.8. std150nh02l.pdf Size:486K _st

STD155N3LH6
STD155N3LH6

STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK™ - IPAK STripFET™ IlI Power MOSFET General features VDSSS RDS(on) ID Type STD150NH02L 24V <0.0035Ω 150A 3 3 STD150NH02L-1 24V <0.0035Ω 150A 2 1 1 ■ RDS(on) * Qg industry’s benchmark ClipPAKTM IPAK ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device Description Int

9.9. stu15n20 std15n20.pdf Size:148K _samhop

STD155N3LH6
STD155N3LH6

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

9.10. stu15l01 std15l01.pdf Size:149K _samhop

STD155N3LH6
STD155N3LH6

Green Product STU/D15L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 145 @ VGS=10V TO-252 and TO-251 Package. 15A 100V 195 @ VGS=4.5V Halogen free. G S STU SERIES STD SERIES ( ) TO - 252AA D- PA

9.11. stu1530pl std1530pl.pdf Size:98K _samhop

STD155N3LH6
STD155N3LH6

S TU/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y FEATUR ES R DS (ON) ( m Ω ) Max VDS S ID S uper high dense cell design for low R DS (ON). R ugged and reliable. 45 @ VGS =-10V -30V -20A TO-252 and TO-251 Package. 60 @ VGS = -4.5V D D G G S SDU SERIES SDD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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