All MOSFET. STD16NF06 Datasheet

 

STD16NF06 Datasheet and Replacement


   Type Designator: STD16NF06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DPAK
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STD16NF06 Datasheet (PDF)

 ..1. Size:696K  st
 std16nf06.pdf pdf_icon

STD16NF06

STD16NF06N-Channel 60V - 0.060 - 16A - DPAKSTripFET II Power MOSFETGeneral featuresVDSS RDS(on) IDTypeSTD16NF06 60V

 ..2. Size:835K  cn vbsemi
 std16nf06.pdf pdf_icon

STD16NF06

STD16NF06www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 0.1. Size:688K  st
 std16nf06t4.pdf pdf_icon

STD16NF06

STD16NF06N-Channel 60V - 0.060 - 16A - DPAKSTripFET II Power MOSFETGeneral featuresVDSS RDS(on) IDTypeSTD16NF06 60V

 0.2. Size:356K  st
 std16nf06l-1.pdf pdf_icon

STD16NF06

STD16NF06LSTD16NF06L-1N-channel 60V - 0.060 - 24A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD16NF06L-1 60V

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Keywords - STD16NF06 MOSFET datasheet

 STD16NF06 cross reference
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