APT10050B2VR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10050B2VR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 520
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 335
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 595
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO247
APT10050B2VR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10050B2VR
Datasheet (PDF)
..1. Size:59K apt
apt10050b2vr.pdf 
APT10050B2VR1000V 21A 0.500POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L
3.1. Size:107K apt
apt10050b2vfr.pdf
APT10050B2VFRAPT10050LVFR1000V 21A 0.500WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifica
3.2. Size:67K apt
apt10050b2vfrg apt10050lvfrg.pdf
APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR
4.1. Size:68K apt
apt10050b2lc.pdf
APT10050B2LCAPT10050LLC1000V 21A 0.500WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fa
4.2. Size:67K apt
apt10050b2 lvfr c.pdf
APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR
Datasheet: APT1004R2BN
, APT1004R2CN
, APT1004R2GN
, APT1004RAN
, APT1004RBN
, APT1004RCN
, APT1004RGN
, APT1004RKN
, 7N60
, APT10050JN
, APT10050JVFR
, APT10050JVR
, APT10050LVFR
, APT10050LVR
, APT10057WVR
, APT10086BVFR
, APT10086BVR
.
