STD1NK80Z Datasheet and Replacement
Type Designator: STD1NK80Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: DPAK
STD1NK80Z substitution
STD1NK80Z Datasheet (PDF)
stq1nk80zr-ap stn1nk80z std1nk80z std1nk80z-1.pdf
STQ1NK80ZR-AP - STN1NK80ZSTD1NK80Z - STD1NK80Z-1N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID Pw2STQ1NK80ZR-AP 800 V
std1nk80z-1 std1nk80zt4 stq1nk80zr-ap.pdf
STQ1NK80ZR-AP - STN1NK80ZSTD1NK80Z - STD1NK80Z-1N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID Pw2STQ1NK80ZR-AP 800 V
std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf
STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V
std1nk60-1 std1nk60t4 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf
STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V
Datasheet: STD16NF06L , STD16NF25 , STD17NF03L , STD17NF25 , STD18N55M5 , STD18NF03L , STD18NF25 , STD1NK60 , AO3407 , STD20NF06 , STD20NF06L , STD20NF10 , STD20NF20 , STD25NF10 , STD25NF10LA , STD26NF10 , STD27N3LH5 .
History: NVTFS5C670NL
Keywords - STD1NK80Z MOSFET datasheet
STD1NK80Z cross reference
STD1NK80Z equivalent finder
STD1NK80Z lookup
STD1NK80Z substitution
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History: NVTFS5C670NL
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