STD2HNK60Z Datasheet and Replacement
Type Designator: STD2HNK60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: DPAK
STD2HNK60Z substitution
STD2HNK60Z Datasheet (PDF)
std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60z-ap.pdf

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STD2HNK60Z-APN-channel 600 V, 4.4 , 2 A Zener-protected SuperMESH Power MOSFET in TO-92-TO-220FP-DPAK-IPAK packagesDatasheet production dataFeatures TABRDS(on) 3Order codes VDSS max. ID PTOT3121DPAKSTD2HNK60Z 600 V
std2hnk60z std2hnk60z-1 stf2hnk60z stq2hnk60zr-ap.pdf

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STQ2HNK60ZR-APDatasheetN-channel 600 V, 3.5 typ., 2 A SuperMESH Power MOSFETs in DPAK, IPAK, TO-220FP and TO-92 packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2HNK60Z DPAKSTD2HNK60Z-1 2 A IPAK600 V 4.8 STF2HNK60Z TO-220FPSTQ2HNK60ZR-AP 0.5 A TO-92 Extremely high dv/dt capability 100% avalanche testedD(2, TA
std2hnk60z stf2hnk60z stq2hnk60zr-ap.pdf

STD2HNK60Z - STD2HNK60Z-1STF2HNK60Z - STQ2HNK60ZR-APN-channel 600V - 4.4 - 2A - TO-92/TO-220FP/DPAK/IPAKZener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOT3321STD2HNK60Z 600V
Datasheet: STD20NF06 , STD20NF06L , STD20NF10 , STD20NF20 , STD25NF10 , STD25NF10LA , STD26NF10 , STD27N3LH5 , IRFZ44N , STD2HNK60Z-1 , STD2N62K3 , STD2NC45-1 , STD2NK100Z , STD2NK60Z-1 , STD2NK70Z , STD2NK90Z , STD2NK90Z-1 .
History: FDMS86368F085
Keywords - STD2HNK60Z MOSFET datasheet
STD2HNK60Z cross reference
STD2HNK60Z equivalent finder
STD2HNK60Z lookup
STD2HNK60Z substitution
STD2HNK60Z replacement
History: FDMS86368F085



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