All MOSFET. STD30PF03L Datasheet

 

STD30PF03L MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD30PF03L
   Marking Code: D30PF03L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18.6 nC
   trⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: DPAK

 STD30PF03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD30PF03L Datasheet (PDF)

 0.1. Size:333K  st
 std30pf03lt4 std30pf03l-1.pdf

STD30PF03L STD30PF03L

STD30PF03LT4STD30PF03L-1P-channel 30 V - 0.025 - 24 A - DPAK / IPAKSTripFET II Power MOSFETFeatures Type VDSS RDS(on) max IDSTD30PF03LT4 30 V

 0.2. Size:329K  st
 std30pf03l-1 std30pf03lt4.pdf

STD30PF03L STD30PF03L

STD30PF03LT4STD30PF03L-1P-channel 30 V - 0.025 - 24 A - DPAK / IPAKSTripFET II Power MOSFETFeatures Type VDSS RDS(on) max IDSTD30PF03LT4 30 V

 5.1. Size:1451K  cn vbsemi
 std30pf03.pdf

STD30PF03L STD30PF03L

STD30PF03www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETA

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