STD3NM60-1 Specs and Replacement
Type Designator: STD3NM60-1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 132 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: IPAK
STD3NM60-1 substitution
- MOSFET ⓘ Cross-Reference Search
STD3NM60-1 datasheet
std3nm60n.pdf
STD3NM60N N-channel 600 V, 1.6 , 3.3 A, MDmesh II Power MOSFET in DPAK package Datasheet preliminary data Features VDSS RDS(on) Order codes ID @TJmax max. STD3NM60N 650 V ... See More ⇒
std3nm50 std3nm50t4.pdf
STD3NM50 STD3NM50-1 N-CHANNEL 550V @ Tjmax- 2.5 - 3A DPAK/IPAK Zener-Protected MDmesh MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STD3NM50 550V ... See More ⇒
Detailed specifications: STD3NK50Z , STD3NK60Z , STD3NK60Z-1 , STD3NK60ZD , STD3NK80Z , STD3NK80Z-1 , STD3NK90Z , STD3NM60 , AON7408 , STD3PK50Z , STD40N2LH5 , STD40NF03L , STD40NF10 , STD40NF3LL , STD44N4LF6 , STD45NF75 , STD4N52K3 .
Keywords - STD3NM60-1 MOSFET specs
STD3NM60-1 cross reference
STD3NM60-1 equivalent finder
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STD3NM60-1 replacement
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