STD50N03L MOSFET. Datasheet pdf. Equivalent

   Type Designator: STD50N03L
   Marking Code: D50N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10.4 nC
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 294 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: DPAK

STD50N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STD50N03L Datasheet (PDF)

..1. Size:340K st
std50n03l std50n03l-1.pdf

STD50N03LSTD50N03L-1N-CHANNEL 30V - 9.2m - 40A - DPAK/IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD50N03L 30V 10.5m 40ASTD50N03L-1 30V 10.5m 40A332 RDS(on)*Qg industrys benchmark 1 1 Conduction losses reducedDPAKIPAK Switching losses reduced Low threshold deviceDescriptionThis product utilizes the latest advan

8.1. Size:533K st
std50nh02l-1 std50nh02lt4.pdf