APT10086BVFR Datasheet. Specs and Replacement

Type Designator: APT10086BVFR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.86 Ohm

Package: TO247

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APT10086BVFR datasheet

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 apt10086bvfr.pdf pdf_icon

APT10086BVFR

APT10086BVFR 1000V 13A 0.860 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te... See More ⇒

 4.1. Size:66K  apt
 apt10086bvr.pdf pdf_icon

APT10086BVFR

APT10086BVR 1000V 13A 0.860 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

 5.1. Size:34K  apt
 apt10086blc.pdf pdf_icon

APT10086BVFR

APT10086BLC APT10086SLC 1000V 13A 0.860W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw... See More ⇒

 6.1. Size:69K  apt
 apt10086svr.pdf pdf_icon

APT10086BVFR

APT10086SVR 1000V 13A 0.860 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒

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Detailed specifications: APT1004RKN, APT10050B2VR, APT10050JN, APT10050JVFR, APT10050JVR, APT10050LVFR, APT10050LVR, APT10057WVR, STF13NM60N, APT10086BVR, APT10086SVR, APT10088HVR, APT10M07JVR, APT10M11B2VR, APT10M11JVR, APT10M11LVR, APT10M19BVFR

Keywords - APT10086BVFR MOSFET specs

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