STD5NM50 MOSFET. Datasheet pdf. Equivalent

STD5NM50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STD5NM50 Datasheet (PDF)

1.1. std5nm50 std5nm50-1.pdf Size:423K _st

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO

1.2. std5nm50t4.pdf Size:338K _st

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO

 1.3. std5nm50.pdf Size:463K _st

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO

1.4. std5nm50t4.pdf Size:277K _inchange_semiconductor

isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage ±30 V

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MOSFET: WFP75N08 | UTC7N65L | SVF4N60CAMJ | SVF4N60CAMN | SVF4N60CAT | SVF4N60CAD | SVF4N60CAK | SVF4N60CAF | SUB85N03-07P | SUP85N03-07P | STP110N7F6 | SI9953DY | NTMFS4C55N | NCE0117K | MT3245 |