All MOSFET. STD5NM50-1 Datasheet

 

STD5NM50-1 Datasheet and Replacement


   Type Designator: STD5NM50-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: IPAK
 

 STD5NM50-1 substitution

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STD5NM50-1 Datasheet (PDF)

 ..1. Size:423K  st
 std5nm50 std5nm50-1.pdf pdf_icon

STD5NM50-1

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

 6.1. Size:463K  st
 std5nm50.pdf pdf_icon

STD5NM50-1

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

 6.2. Size:338K  st
 std5nm50t4.pdf pdf_icon

STD5NM50-1

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

 6.3. Size:277K  inchange semiconductor
 std5nm50t4.pdf pdf_icon

STD5NM50-1

isc N-Channel MOSFET Transistor STD5NM50T4FEATURESStatic drain-source on-resistance:RDS(on)0.8100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-Source Voltage 30 V

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Datasheet: STD5N52U , STD5N62K3 , STD5N95K3 , STD5NK40Z , STD5NK50Z , STD5NK52ZD , STD5NK60Z , STD5NM50 , 2SK3568 , STD5NM60 , STD60N3LH5 , STD60N55F3 , STD60NF06 , STD60NF3LL , STD60NF55L , STD60NF55L-1 , STD60NF55LA .

History: AP200N04TLG5 | ET2316 | SWD4N60K | AP15P04D | SUK3015 | AP2300AI

Keywords - STD5NM50-1 MOSFET datasheet

 STD5NM50-1 cross reference
 STD5NM50-1 equivalent finder
 STD5NM50-1 lookup
 STD5NM50-1 substitution
 STD5NM50-1 replacement

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