All MOSFET. STD5NM50-1 Datasheet

 

STD5NM50-1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD5NM50-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: IPAK

 STD5NM50-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD5NM50-1 Datasheet (PDF)

 ..1. Size:423K  st
 std5nm50 std5nm50-1.pdf

STD5NM50-1 STD5NM50-1

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

 6.1. Size:463K  st
 std5nm50.pdf

STD5NM50-1 STD5NM50-1

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

 6.2. Size:338K  st
 std5nm50t4.pdf

STD5NM50-1 STD5NM50-1

STD5NM50STD5NM50-1N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTD5NM50 500V

 6.3. Size:277K  inchange semiconductor
 std5nm50t4.pdf

STD5NM50-1 STD5NM50-1

isc N-Channel MOSFET Transistor STD5NM50T4FEATURESStatic drain-source on-resistance:RDS(on)0.8100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-Source Voltage 30 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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