STD5NM50-1 MOSFET Datasheet: N-Ch, 500V, 7.5A. Full specification with pinout and replacement list

STD5NM50-1 Specs and Replacement

Type Designator: STD5NM50-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: IPAK

STD5NM50-1 substitution

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STD5NM50-1 datasheet

..1. Size:423K st
std5nm50 std5nm50-1.pdf pdf_icon

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V ... See More ⇒

6.1. Size:463K st
std5nm50.pdf pdf_icon

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V ... See More ⇒

6.2. Size:338K st
std5nm50t4.pdf pdf_icon

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V ... See More ⇒

6.3. Size:277K inchange semiconductor
std5nm50t4.pdf pdf_icon

isc N-Channel MOSFET Transistor STD5NM50T4 FEATURES Static drain-source on-resistance RDS(on) 0.8 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage 30 V... See More ⇒

Detailed specifications: STD5N52U, STD5N62K3, STD5N95K3, STD5NK40Z, STD5NK50Z, STD5NK52ZD, STD5NK60Z, STD5NM50, 2SK3568, STD5NM60, STD60N3LH5, STD60N55F3, STD60NF06, STD60NF3LL, STD60NF55L, STD60NF55L-1, STD60NF55LA