All MOSFET. STD60NF06 Datasheet

 

STD60NF06 Datasheet and Replacement


   Type Designator: STD60NF06
   Marking Code: D60NF06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 108 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DPAK
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STD60NF06 Datasheet (PDF)

 ..1. Size:414K  st
 std60nf06.pdf pdf_icon

STD60NF06

STD60NF06N-channel 60V - 0.014 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF06 60V

 0.1. Size:407K  st
 std60nf06t4.pdf pdf_icon

STD60NF06

STD60NF06N-channel 60V - 0.014 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF06 60V

 0.2. Size:825K  cn vbsemi
 std60nf06t4.pdf pdf_icon

STD60NF06

STD60NF06T4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi

 7.1. Size:327K  st
 std60nf55la.pdf pdf_icon

STD60NF06

STD60NF55LAN-channel 55V - 0.012 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF55LA 55V

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History: MXP4004AT | SVGP20110NSTR | MEE42942-G

Keywords - STD60NF06 MOSFET datasheet

 STD60NF06 cross reference
 STD60NF06 equivalent finder
 STD60NF06 lookup
 STD60NF06 substitution
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