APT10086BVR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10086BVR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 185 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.86 Ohm
Package: TO247
APT10086BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10086BVR Datasheet (PDF)
apt10086bvr.pdf
APT10086BVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt10086bvfr.pdf
APT10086BVFR1000V 13A 0.860POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te
apt10086blc.pdf
APT10086BLCAPT10086SLC1000V 13A 0.860WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw
apt10086svr.pdf
APT10086SVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
Datasheet: APT10050B2VR , APT10050JN , APT10050JVFR , APT10050JVR , APT10050LVFR , APT10050LVR , APT10057WVR , APT10086BVFR , IRF730 , APT10086SVR , APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR .
History: ZVNL120A | 24NM60L-TF1-T
History: ZVNL120A | 24NM60L-TF1-T
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