All MOSFET. APT10086SVR Datasheet

 

APT10086SVR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT10086SVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.86 Ohm
   Package: D3PAK

 APT10086SVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10086SVR Datasheet (PDF)

 ..1. Size:69K  apt
 apt10086svr.pdf

APT10086SVR APT10086SVR

APT10086SVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 6.1. Size:68K  apt
 apt10086bvfr.pdf

APT10086SVR APT10086SVR

APT10086BVFR1000V 13A 0.860POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 6.2. Size:34K  apt
 apt10086blc.pdf

APT10086SVR APT10086SVR

APT10086BLCAPT10086SLC1000V 13A 0.860WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw

 6.3. Size:66K  apt
 apt10086bvr.pdf

APT10086SVR APT10086SVR

APT10086BVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

Datasheet: APT10050JN , APT10050JVFR , APT10050JVR , APT10050LVFR , APT10050LVR , APT10057WVR , APT10086BVFR , APT10086BVR , K2611 , APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR , APT10M19SVR .

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