STD70N6F3 MOSFET. Datasheet pdf. Equivalent

STD70N6F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STD70N6F3 Datasheet (PDF)

8.1. std70nh02l std70nh02l-1.pdf Size:505K _st

STD70NH02L STD70NH02L-1 N-channel 24V - 0.0062Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD70NH02L-1 24V <0.008Ω 60A(1) STD70NH02L 24V <0.008Ω 60A(1) 3 3 1. Value limited by wire bonding 2 1 1 ■ RDS(ON) * Qg industry’s benchmark DPAK ■ Conduction losses reduced IPAK ■ Switching losses reduced ■ Low threshold device

8.2. std70n02l std70n02l-1.pdf Size:374K _st

STD70N02L STD70N02L-1 N-channel 25V - 0.0068Ω - 60A - DPAK - IPAK STripFET™ III Power MOSFET Features Type VDSS RDS(on) ID STD70N02L 25V <0.008Ω 60A STD70N02L-1 25V <0.008Ω 60A 3 3 ■ RDS(ON) * Qg industry’s benchmark 2 1 1 ■ Conduction losses reduced DPAK IPAK ■ Switching losses reduced ■ Low threshold device Application ■ Switching applications Figure 1.

 8.3. std70ns04zl.pdf Size:742K _st

STD70NS04ZL N-channel clamped 9.5 mΩ, 70 A DPAK fully protected SAFeFET™ Power MOSFET Features RDS(on) Type VDSS ID max STD70NS04ZL Clamped < 10.5 mΩ 70 A ■ Low capacitance and gate charge 3 1 ■ 100% avalanche tested ■ 175 °C maximum junction temperature DPAK Applications ■ Switching applications – ABS, solenoid drivers – Motor control – DC-DC converters

8.4. stb70n10f4 std70n10f4 stp70n10f4 stw70n10f4.pdf Size:971K _st

STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in TO-220, DPAK, TO-247, D2PAK Features Type VDSS RDS(on) max ID STB70N10F4 100 V < 0.0195 Ω 65 A 3 2 3 1 STD70N10F4 100 V < 0.0195 Ω 60 A 2 1 TO-220 STP70N10F4 100 V < 0.0195 Ω 65 A TO-247 STW70N10F4 100 V < 0.0195 Ω 65 A ■ Exceptional dv/dt capabilit

 8.5. std70nh02lt4.pdf Size:504K _st

STD70NH02L STD70NH02L-1 N-channel 24V - 0.0062Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD70NH02L-1 24V <0.008Ω 60A(1) STD70NH02L 24V <0.008Ω 60A(1) 3 3 1. Value limited by wire bonding 2 1 1 ■ RDS(ON) * Qg industry’s benchmark DPAK ■ Conduction losses reduced IPAK ■ Switching losses reduced ■ Low threshold device

8.6. std70n02l-1 std70n02l.pdf Size:378K _st

STD70N02L STD70N02L-1 N-channel 25V - 0.0068Ω - 60A - DPAK - IPAK STripFET™ III Power MOSFET Features Type VDSS RDS(on) ID STD70N02L 25V <0.008Ω 60A STD70N02L-1 25V <0.008Ω 60A 3 3 ■ RDS(ON) * Qg industry’s benchmark 2 1 1 ■ Conduction losses reduced DPAK IPAK ■ Switching losses reduced ■ Low threshold device Application ■ Switching applications Figure 1.

8.7. std70n2lh5 stu70n2lh5.pdf Size:230K _st

STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STD70N2LH5 25 V 0.0071 Ω 48 A STU70N2LH5 25 V 0.0075 Ω 48 A 3 3 2 ■ RDS(on) * Qg industry benchmark 1 1 ■ Extremely low on-resistance RDS(on) DPAK IPAK ■ Very low switching gate charge ■ High avalanche ruggedness ■ L

8.8. std70n03l-1 std70n03l-1 std70n03l.pdf Size:351K _st

STD70N03L STD70N03L-1 N-channel 30V - 0.0059Ω - 70A - DPAK / IPAK STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STD70N03L 30V <0.0073Ω 70A STD70N03L-1 30V <0.0073Ω 70A 3 3 ■ RDS(ON) * Qg industry’s benchmark 2 1 1 DPAK ■ Conduction losses reduced IPAK ■ Switching losses reduced ■ Low threshold device Description This product utilizes the

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MOSFET: IRFU430A | IRFSL7787 | IRFSL7762 | IRFSL4510 | IRFP4905 | IRFP3207Z | IRFL3713S | IPI80CN10N | IPI600N25N3 | IPI530N15N3 | IPI35CN10N | IPI320N20N3 | IPI26CN10N | IPI200N25N3 | IPI200N15N3 |