All MOSFET. STD95N4F3 Datasheet

 

STD95N4F3 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD95N4F3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 40 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: DPAK

STD95N4F3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD95N4F3 Datasheet (PDF)

0.1. std95n4f3 stp95n4f3.pdf Size:760K _st

STD95N4F3
STD95N4F3

STD95N4F3 STP95N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220 STripFET™ III Power MOSFET Features RDS(on) Type VDSS ID Pw max STD95N4F3 40 V < 5.8 m Ω 80 A 110 W STP95N4F3 40 V < 6.2 mΩ 80 A 110 W 3 3 ■ Standard threshold drive 2 1 1 ■ 100% avalanche tested TO-220 DPAK Applications ■ Switching applications – Automotive Figure 1. Internal schematic diagram

7.1. stb95n4lf3 std95n4lf3.pdf Size:1108K _st

STD95N4F3
STD95N4F3

STB95N4LF3 STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK, D2PAK STripFET™ III Power MOSFET Features RDS(on) Type VDSS ID PD max STD95N4LF3 40 V < 6.0 mΩ 80 A(1) 110 W STB95N4LF3 (2) 40 V < 6.0 mΩ 80 A 110 W 3 3 1. Value limited by wire bonding 1 1 2. All data which refers solely to the D²PAK package is D²PAK DPAK preliminary ■ 100% avalanche tested ■ Logic level d

 8.1. stb95n3llh6 std95n3llh6 stp95n3llh6 stu95n3llh6.pdf Size:933K _st

STD95N4F3
STD95N4F3

STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID 3 1 3 STB95N3LLH6 30 V 0.0042 Ω 80 A 2 DPAK 1 STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω 80 A IPAK STU95N3LLH6 30 V 0.0047 Ω 80 A ■ RDS(on) * Qg industry benchmark 3 ■

8.2. std95n04 std95n04 stp95n04 stp95n04.pdf Size:344K _st

STD95N4F3
STD95N4F3

STD95N04 STP95N04 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET™ Power MOSFET General features Type VDSS RDS(on) ID Pw STD95N04 40V <6.5mΩ 80A 110W STP95N04 40V <6.5mΩ 80A 110W ■ Standard threshold drive 3 3 2 1 1 ■ 100% avalanche tested TO-220 DPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic uniq

 8.3. std95nh02lt4.pdf Size:344K _st

STD95N4F3
STD95N4F3

STD95NH02L-1 STD95NH02L N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STD95NH02L 24V < 0.005Ω 80A(1) STD95NH02L-1 24V < 0.005Ω 80A(1) 3 1. Value limited by wire bonding 3 2 1 1 ■ Conduction losses reduced IPAK DPAK ■ Switching losses reduced ■ Low threshold device Description The device is ba

8.4. std95nh02l std95nh02l-1.pdf Size:341K _st

STD95N4F3
STD95N4F3

STD95NH02L-1 STD95NH02L N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STD95NH02L 24V < 0.005Ω 80A(1) STD95NH02L-1 24V < 0.005Ω 80A(1) 3 1. Value limited by wire bonding 3 2 1 1 ■ Conduction losses reduced IPAK DPAK ■ Switching losses reduced ■ Low threshold device Description The device is ba

 8.5. std95n2lh5 stp95n2lh5 stu95n2lh5.pdf Size:613K _st

STD95N4F3
STD95N4F3

STD95N2LH5 STP95N2LH5, STU95N2LH5 N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID 3 3 STD95N2LH5 25 V < 0.0045 Ω 80 A 1 2 1 STP95N2LH5 25 V < 0.0049 Ω 80 A DPAK STU95N2LH5 25 V < 0.0049 Ω 80 A IPAK ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) 3 ■ High avalanche ruggedness

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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