All MOSFET. STE30NK90Z Datasheet

 

STE30NK90Z MOSFET. Datasheet pdf. Equivalent

Type Designator: STE30NK90Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 500 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: ISOTOP

STE30NK90Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE30NK90Z Datasheet (PDF)

0.1. ste30nk90z.pdf Size:303K _st

STE30NK90Z
STE30NK90Z

STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) ID Pw STE30NK90Z 900V <0.26Ω 28A 500W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized iSOTOP Description The SuperFREDMesh™ series is obtained through an extreme optimization of ST’s well established strip-based Powe

Datasheet: STD95N2LH5 , STD95N3LLH6 , STD95N4F3 , STD95N4LF3 , STD9NM50N , STD9NM60N , STE140NF20D , STE250NS10 , 2N7000 , STE40NC60 , STE40NK90ZD , STE48NM50 , STE53NC50 , STE70NM50 , STE70NM60 , STF10N62K3 , STF10N65K3 .

 

 
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