All MOSFET. STE48NM50 Datasheet

 

STE48NM50 MOSFET. Datasheet pdf. Equivalent

Type Designator: STE48NM50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 450 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 48 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 87 nC

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: ISOTOP

STE48NM50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE48NM50 Datasheet (PDF)

0.1. ste48nm50.pdf Size:254K _st

STE48NM50
STE48NM50

STE48NM50 N-CHANNEL 550V @ Tjmax - 0.08Ω - 48A ISOTOP MDmesh™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID (@Tjmax) STE48NM50 550V < 0.1Ω 48 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE ISOTOP TIGHT PROCESS CONTROL AND HIGH MANUFACTUR

Datasheet: STD95N4LF3 , STD9NM50N , STD9NM60N , STE140NF20D , STE250NS10 , STE30NK90Z , STE40NC60 , STE40NK90ZD , IRFZ46N , STE53NC50 , STE70NM50 , STE70NM60 , STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N .

 

 
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