STE48NM50 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE48NM50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 450 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 48 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 87 nC
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: ISOTOP
STE48NM50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE48NM50 Datasheet (PDF)
0.1. ste48nm50.pdf 
Size:254K _st
STE48NM50 N-CHANNEL 550V @ Tjmax - 0.08Ω - 48A ISOTOP MDmesh™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID (@Tjmax) STE48NM50 550V < 0.1Ω 48 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE ISOTOP TIGHT PROCESS CONTROL AND HIGH MANUFACTUR
Datasheet: STD95N4LF3 , STD9NM50N , STD9NM60N , STE140NF20D , STE250NS10 , STE30NK90Z , STE40NC60 , STE40NK90ZD , IRFZ46N , STE53NC50 , STE70NM50 , STE70NM60 , STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N .
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