STE48NM50 Datasheet and Replacement
Type Designator: STE48NM50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 610 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: ISOTOP
STE48NM50 substitution
STE48NM50 Datasheet (PDF)
ste48nm50.pdf
STE48NM50N-CHANNEL 550V @ Tjmax - 0.08 - 48A ISOTOPMDmesh MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID(@Tjmax)STE48NM50 550V
Datasheet: STD95N4LF3 , STD9NM50N , STD9NM60N , STE140NF20D , STE250NS10 , STE30NK90Z , STE40NC60 , STE40NK90ZD , IRFB4110 , STE53NC50 , STE70NM50 , STE70NM60 , STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N .
Keywords - STE48NM50 MOSFET datasheet
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History: 2N6800SM | QM2416J
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