All MOSFET. STF11N65K3 Datasheet

 

STF11N65K3 MOSFET. Datasheet pdf. Equivalent

Type Designator: STF11N65K3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220FP

STF11N65K3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STF11N65K3 Datasheet (PDF)

1.1. stf11n65k3.pdf Size:837K _st

STF11N65K3
STF11N65K3

STF11N65K3 N-channel 650 V, 0.765 ?, 11 A, TO-220FP SuperMESH3™ Power MOSFET Features RDS(on) Type VDSS ID Pw max STF10N65K3 650 V < 0.85 ? 11 A 35 W ¦ 100% avalanche tested 3 ¦ Extremely high dv/dt capability 2 1 ¦ Gate charge minimized TO-220FP ¦ Very low intrinsic capacitances ¦ Improved diode reverse recovery characteristics ¦ Zener-protected Application Figure 1. Interna

4.1. std11nm50n stf11nm50n stp11nm50n.pdf Size:678K _st

STF11N65K3
STF11N65K3

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 ?, 9 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220 Features RDS(on) Type VDSS @TJmax ID 3 max 1 3 STD11NM50N 2 DPAK 1 STF11NM50N 550 V < 0.47 ? 9 A STP11NM50N TO-220 ¦ 100% avalanche tested 3 2 ¦ Low input capacitances and gate charge 1 TO-220FP ¦ Low gate input resistance Application ¦ Switching applicatio

4.2. stb11nm65n stf11nm65n stp11nm65n stw11nm65n.pdf Size:539K _st

STF11N65K3
STF11N65K3

STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33? - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET Features VDSS RDS(on) Type ID (@TJmax) Max 3 2 3 1 2 STI11NM65N 710 V < 0.38 ? 12 A 1 I?PAK TO-220 STB11NM65N 710 V < 0.38 ? 12 A STF11NM65N 710 V < 0.38 ? 12 A(1) 3 1 STP11NM65N 710 V < 0.38 ? 12 A D?PAK STW11NM65N 710 V

4.3. stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf Size:632K _st

STF11N65K3
STF11N65K3

STx11NM60N N-channel 600 V, 0.37 ?, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 ? 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 ? 10 A STD11NM60N 650 V 0.45 ? 10 A STD11NM60N-1 650 V 0.45 ? 10 A STF11NM60N 650 V 0.45 ? 10 A(1) STP11NM60N 650 V 0.45 ? 10 A 3 3 3 2 2

4.4. stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf Size:635K _st

STF11N65K3
STF11N65K3

STx11NM60N N-channel 600 V, 0.37 ?, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 ? 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 ? 10 A STD11NM60N 650 V 0.45 ? 10 A STD11NM60N-1 650 V 0.45 ? 10 A STF11NM60N 650 V 0.45 ? 10 A(1) STP11NM60N 650 V 0.45 ? 10 A 3 3 3 2 2

4.5. stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf Size:943K _st

STF11N65K3
STF11N65K3

STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 ?, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features RDS(on) Type VDSS RDS(on)*Qg ID max 3 1 3 STB11NM80 2 D?PAK 1 STF11NM80 TO-247 800 V < 0.40 ? 14?*nC 11 A STP11NM80 STW11NM80 3 ¦ Low input capacitance and gate charge 2 3 1 2 1 ¦ Low gate input resistance TO-220FP TO-220 ¦ Best RDS(on

4.6. std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf Size:750K _st

STF11N65K3
STF11N65K3

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 ?, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID 3 3 STD11NM60ND 10 A 1 2 1 STF11NM60ND 10 A(1) DPAK I?PAK STI11NM60ND 650 V < 0.45 ? 10 A 3 2 STP11NM60ND 10 A 1 STU11NM60ND 10 A IPAK 1. Limited only by maximum temperature allowed 3 3

Datasheet: STF10N62K3 , STF10N65K3 , STF10NK50Z , STF10NM50N , STF10NM60N , STF10NM60ND , STF10NM65N , STF11N52K3 , IRF830 , STF11NM50N , STF11NM60ND , STF11NM80 , STF120NF10 , STF12N50U , STF12N65M5 , STF12NK60Z , STF12NK65Z .

 


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