STF8N65M5 Specs and Replacement
Type Designator: STF8N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220FP
STF8N65M5 substitution
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STF8N65M5 datasheet
stf8n65m5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF8N65M5 FEATURES Excellent switching performance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-... See More ⇒
stf8n60dm2.pdf
STF8N60DM2 N-channel 600 V, 550 m typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF8N60DM2 600 V 600 m 8 A 25 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness ... See More ⇒
Detailed specifications: STF6N65K3, STF6N95K5, STF6NK70Z, STF7N52DK3, STF7N52K3, STF7N95K3, STF7NM60N, STF7NM80, IRF740, STF8NK100Z, STF8NM50N, STF8NM60ND, STF9NK60ZD, STF9NK90Z, STF9NM60N, STFI10NK60Z, STFI13NK60Z
Keywords - STF8N65M5 MOSFET specs
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