STH210N75F6-2 PDF and Equivalents Search

 

STH210N75F6-2 Specs and Replacement

Type Designator: STH210N75F6-2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: H2PAK2

STH210N75F6-2 substitution

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STH210N75F6-2 datasheet

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 sth210n75f6-2.pdf pdf_icon

STH210N75F6-2

STH210N75F6-2 N-channel 75 V, 2.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in H PAK-2 package Datasheet production data Features Order code VDSS RDS(on) max ID TAB STH210N75F6-2 75 V ... See More ⇒

Detailed specifications: STFI13NM60N, STFI20NK50Z, STFW12N120K5, STFW3N150, STFW4N150, STFW60N65M5, STFW6N120K3, STH180N10F3-2, 10N60, STH250N55F3-6, STH260N6F6-2, STH270N4F3-6, STH300NH02L-6, STH85N15F4-2, STH90N15F4-2, STI10N62K3, STI12N65M5

Keywords - STH210N75F6-2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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