All MOSFET. STH210N75F6-2 Datasheet

 

STH210N75F6-2 Datasheet and Replacement


   Type Designator: STH210N75F6-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1060 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: H2PAK2
 

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STH210N75F6-2 Datasheet (PDF)

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STH210N75F6-2

STH210N75F6-2N-channel 75 V, 2.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDTABSTH210N75F6-2 75 V

Datasheet: STFI13NM60N , STFI20NK50Z , STFW12N120K5 , STFW3N150 , STFW4N150 , STFW60N65M5 , STFW6N120K3 , STH180N10F3-2 , IRFB4227 , STH250N55F3-6 , STH260N6F6-2 , STH270N4F3-6 , STH300NH02L-6 , STH85N15F4-2 , STH90N15F4-2 , STI10N62K3 , STI12N65M5 .

History: IRFR4510PBF | IPI80N06S3-07 | STI150N10F7 | HSBA3062 | NCE30P50G | NTTFS5C680NL | NILMS4501NR2G

Keywords - STH210N75F6-2 MOSFET datasheet

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