All MOSFET. STH260N6F6-2 Datasheet

 

STH260N6F6-2 Datasheet and Replacement


   Type Designator: STH260N6F6-2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 1235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: H2PAK2
 

 STH260N6F6-2 substitution

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STH260N6F6-2 Datasheet (PDF)

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STH260N6F6-2

STH260N6F6-2N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-2 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDTABSTH260N6F6-2 60 V

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STH260N6F6-2

STH260N6F6-6N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in HPAK-6 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTH260N6F6-6 60 V 2.4 m 180 ATAB Low gate charge Very low on-resistance7 High avalanche ruggedness11ApplicationsH2PAK-6 Switching applicationsDescriptionFigure 1. Internal sch

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STH260N6F6-2

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STH260N6F6-2

STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 m typ., 180 A STripFET F6 Power MOSFET in HPAK-2 and HPAK-6 packages Datasheet - production data Features Order code V R max I DS DS(on) DTABTABSTH265N6F6-2AG 60 V 2.1 m 180 A STH265N6F6-6AG 60 V 2.1 m 180 A 7231 Designed for automotive applications 1 Very low on-resistance

Datasheet: STFW12N120K5 , STFW3N150 , STFW4N150 , STFW60N65M5 , STFW6N120K3 , STH180N10F3-2 , STH210N75F6-2 , STH250N55F3-6 , IRFP250N , STH270N4F3-6 , STH300NH02L-6 , STH85N15F4-2 , STH90N15F4-2 , STI10N62K3 , STI12N65M5 , STI13NM60N , STI16N65M5 .

History: RAL025P01 | NTP5412NG | SISA12ADN | STB34N65M5 | TMB140N10A | NTR4502PT1G | SFI9540

Keywords - STH260N6F6-2 MOSFET datasheet

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