STH260N6F6-2 Specs and Replacement
Type Designator: STH260N6F6-2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 1235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: H2PAK2
STH260N6F6-2 substitution
- MOSFET ⓘ Cross-Reference Search
STH260N6F6-2 datasheet
sth260n6f6-2.pdf
STH260N6F6-2 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in H PAK-2 package Datasheet production data Features Order code VDSS RDS(on) max ID TAB STH260N6F6-2 60 V ... See More ⇒
sth260n6f6-6.pdf
STH260N6F6-6 N-channel 60 V, 1.7 m typ., 180 A STripFET VI DeepGATE Power MOSFET in H PAK-6 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STH260N6F6-6 60 V 2.4 m 180 A TAB Low gate charge Very low on-resistance 7 High avalanche ruggedness 1 1 Applications H2PAK-6 Switching applications Description Figure 1. Internal sch... See More ⇒
sth265n6f6-2ag sth265n6f6-6ag.pdf
STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 m typ., 180 A STripFET F6 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB TAB STH265N6F6-2AG 60 V 2.1 m 180 A STH265N6F6-6AG 60 V 2.1 m 180 A 7 2 3 1 Designed for automotive applications 1 Very low on-resistance ... See More ⇒
Detailed specifications: STFW12N120K5, STFW3N150, STFW4N150, STFW60N65M5, STFW6N120K3, STH180N10F3-2, STH210N75F6-2, STH250N55F3-6, IRFB4115, STH270N4F3-6, STH300NH02L-6, STH85N15F4-2, STH90N15F4-2, STI10N62K3, STI12N65M5, STI13NM60N, STI16N65M5
Keywords - STH260N6F6-2 MOSFET specs
STH260N6F6-2 cross reference
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STH260N6F6-2 substitution
STH260N6F6-2 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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