STI270N4F3 Specs and Replacement
Type Designator: STI270N4F3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 1800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: I2PAK
STI270N4F3 substitution
- MOSFET ⓘ Cross-Reference Search
STI270N4F3 datasheet
stb270n4f3 sti270n4f3.pdf
STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 m , 160 A, D2PAK, I2PAK STripFET III Power MOSFET Features RDS(on) Type VDSS ID PTOT max STB270N4F3 40 V ... See More ⇒
Detailed specifications: STI18NM60N, STI200N6F3, STI21N65M5, STI22NM60N, STI23NM60ND, STI24NM60N, STI24NM65N, STI26NM60N, IRFP260, STI300N4F6, STI30N65M5, STI32N65M5, STI35N65M5, STI42N65M5, STI4N62K3, STI55NF03L, STI6N62K3
Keywords - STI270N4F3 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WMB81N03T1
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