STI32N65M5 Specs and Replacement

Type Designator: STI32N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm

Package: I2PAK

STI32N65M5 substitution

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STI32N65M5 datasheet

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 stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf pdf_icon

STI32N65M5

STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS@ Type RDS(on) max ID TJmax 3 3 1 2 3 1 2 STB32N65M5 710 V ... See More ⇒

Detailed specifications: STI22NM60N, STI23NM60ND, STI24NM60N, STI24NM65N, STI26NM60N, STI270N4F3, STI300N4F6, STI30N65M5, SKD502T, STI35N65M5, STI42N65M5, STI4N62K3, STI55NF03L, STI6N62K3, STI70N10F4, STI8N65M5, STL100N1VH5

Keywords - STI32N65M5 MOSFET specs

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