STI35N65M5 Specs and Replacement
Type Designator: STI35N65M5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 84 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: I2PAK
STI35N65M5 substitution
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STI35N65M5 datasheet
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf
STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB35N65M5 710 V ... See More ⇒
Detailed specifications: STI23NM60ND, STI24NM60N, STI24NM65N, STI26NM60N, STI270N4F3, STI300N4F6, STI30N65M5, STI32N65M5, K4145, STI42N65M5, STI4N62K3, STI55NF03L, STI6N62K3, STI70N10F4, STI8N65M5, STL100N1VH5, STL100N6LF6
Keywords - STI35N65M5 MOSFET specs
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