STI35N65M5 Datasheet and Replacement
Type Designator: STI35N65M5
Marking Code: 35N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 83 nC
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 84 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: I2PAK
STI35N65M5 substitution
STI35N65M5 Datasheet (PDF)
stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V
Datasheet: STI23NM60ND , STI24NM60N , STI24NM65N , STI26NM60N , STI270N4F3 , STI300N4F6 , STI30N65M5 , STI32N65M5 , IRFB3607 , STI42N65M5 , STI4N62K3 , STI55NF03L , STI6N62K3 , STI70N10F4 , STI8N65M5 , STL100N1VH5 , STL100N6LF6 .
Keywords - STI35N65M5 MOSFET datasheet
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