All MOSFET. STI42N65M5 Datasheet

 

STI42N65M5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STI42N65M5
   Marking Code: 42N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
   Package: I2PAK

 STI42N65M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STI42N65M5 Datasheet (PDF)

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 stb42n65m5 stf42n65m5 sti42n65m5 stp42n65m5 stw42n65m5.pdf

STI42N65M5 STI42N65M5

STx42N65M5N-channel 650 V, 0.070 , 33 A MDmesh V Power MOSFETin I2PAK, TO-220, TO-220FP, D2PAK and TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max3 3321STB42N65M5 710 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: VBM1158N | 12N60L-T2Q-T | IPP60R600C6

 

 
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