STI42N65M5 Datasheet and Replacement
Type Designator: STI42N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: I2PAK
STI42N65M5 substitution
STI42N65M5 Datasheet (PDF)
stb42n65m5 stf42n65m5 sti42n65m5 stp42n65m5 stw42n65m5.pdf

STx42N65M5N-channel 650 V, 0.070 , 33 A MDmesh V Power MOSFETin I2PAK, TO-220, TO-220FP, D2PAK and TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max3 3321STB42N65M5 710 V
Datasheet: STI24NM60N , STI24NM65N , STI26NM60N , STI270N4F3 , STI300N4F6 , STI30N65M5 , STI32N65M5 , STI35N65M5 , TK10A60D , STI4N62K3 , STI55NF03L , STI6N62K3 , STI70N10F4 , STI8N65M5 , STL100N1VH5 , STL100N6LF6 , STL10N3LLH5 .
History: IPN80R900P7
Keywords - STI42N65M5 MOSFET datasheet
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History: IPN80R900P7



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