STI70N10F4 Specs and Replacement

Type Designator: STI70N10F4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: I2PAK

STI70N10F4 substitution

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STI70N10F4 datasheet

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STI70N10F4

STI70N10F4 N-channel 100 V, 0.015 , 60 A, STripFET DeepGATE Power MOSFET in I2PAK Features Type VDSS RDS(on) max ID STI70N10F4 100 V ... See More ⇒

Detailed specifications: STI300N4F6, STI30N65M5, STI32N65M5, STI35N65M5, STI42N65M5, STI4N62K3, STI55NF03L, STI6N62K3, IRF1010E, STI8N65M5, STL100N1VH5, STL100N6LF6, STL10N3LLH5, STL11N3LLH6, STL12N65M5, STL13NM60N, STL140N4LLF5

Keywords - STI70N10F4 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.