STI70N10F4 Datasheet and Replacement
Type Designator: STI70N10F4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 305 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: I2PAK
STI70N10F4 substitution
STI70N10F4 Datasheet (PDF)
sti70n10f4.pdf
STI70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in I2PAKFeaturesType VDSS RDS(on) max IDSTI70N10F4 100 V
Datasheet: STI300N4F6 , STI30N65M5 , STI32N65M5 , STI35N65M5 , STI42N65M5 , STI4N62K3 , STI55NF03L , STI6N62K3 , TK10A60D , STI8N65M5 , STL100N1VH5 , STL100N6LF6 , STL10N3LLH5 , STL11N3LLH6 , STL12N65M5 , STL13NM60N , STL140N4LLF5 .
History: AP9971AGM | BRFL60R190C | VS4020AP | HA9N90 | JCS110N07I | 2SK1766 | AONS30300
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History: AP9971AGM | BRFL60R190C | VS4020AP | HA9N90 | JCS110N07I | 2SK1766 | AONS30300
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