STI8N65M5 Specs and Replacement

Type Designator: STI8N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: I2PAK

STI8N65M5 substitution

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STI8N65M5 datasheet

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STI8N65M5

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STI8N65M5

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Detailed specifications: STI30N65M5, STI32N65M5, STI35N65M5, STI42N65M5, STI4N62K3, STI55NF03L, STI6N62K3, STI70N10F4, IRFB3607, STL100N1VH5, STL100N6LF6, STL10N3LLH5, STL11N3LLH6, STL12N65M5, STL13NM60N, STL140N4LLF5, STL150N3LLH5

Keywords - STI8N65M5 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.