All MOSFET. STL17N3LLH6 Datasheet

 

STL17N3LLH6 Datasheet and Replacement


   Type Designator: STL17N3LLH6
   Marking Code: 17N3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: POWERFLAT3.3X3.3
 

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STL17N3LLH6 Datasheet (PDF)

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STL17N3LLH6

STL17N3LLH6N-channel 30 V, 0.0038 , 17 A PowerFLAT(3.3x3.3)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL17N3LLH6 30 V 0.0045 17 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power los

 8.1. Size:1097K  st
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STL17N3LLH6

STL17N65M5N-channel 650 V, 0.338 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - preliminary dataFeaturesOrder code VDS @ TJmax RDS(on) max IDS(2) Bottom viewS(2)S(2)STL17N65M5 710 V 0.374 10 A(1)G(1)1. The value is rated according to Rthj-case and limited by D(3)package Worldwide best RDS(on) * area Higher VDSS rating an

Datasheet: STL140N4LLF5 , STL150N3LLH5 , STL150N3LLH6 , STL15DN4F5 , STL15N3LLH5 , STL160N3LLH6 , STL16N1VH5 , STL16N65M5 , STP80NF70 , STL18N55M5 , STL18NM60N , STL21N65M5 , STL23N85K5 , STL23NM60ND , STL24NM60N , STL25N15F3 , STL25N15F4 .

History: NCEAP4075GU | STD25NF10

Keywords - STL17N3LLH6 MOSFET datasheet

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