STL23N85K5 MOSFET. Datasheet pdf. Equivalent
Type Designator: STL23N85K5
Marking Code: 23N85K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.275 Ohm
Package: POWERFLAT8X8HV
STL23N85K5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STL23N85K5 Datasheet (PDF)
stl23n85k5.pdf
STL23N85K5N-channel 850 V, 0.2 typ., 12.5 A Zener-protectedSuperMESH5 Power MOSFET in PowerFLAT 8x8 HVDatasheet preliminary dataFeaturesOrder code VDSS RDS(on)max ID PWS(2) Bottom viewS(2)STL23N85K5 850 V
stl23ns3llh7.pdf
STL23NS3LLH7 N-channel 30 V, 0.0027 typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3 Datasheet - production data Features Order code V R max I DS DS(on) DSTL23NS3LLH7 30 V 0.0037 23 A Very low on-resistance Very low Qg High avalanche ruggedness Embedded Schottky diode Applications Switching applicat
stl23nm60nd.pdf
STL23NM60NDN-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET(with fast diode) PowerFLAT (8x8) HVPreliminary dataFeaturesVDSSType RDS(on) max ID S(3) Bottom viewS(3)(@Tjmax)S(3)G(1)STL23NM60ND 650 V
stl23nm50n.pdf
STL23NM50NN-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFETin a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDSS @ RDS(on) Type IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL23NM50N 550 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NTMFS5C450N | NCEP090N85AQU
History: NTMFS5C450N | NCEP090N85AQU
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