STL60N32N3LL Datasheet and Replacement
Type Designator: STL60N32N3LL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.12 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15.6 nS
Cossⓘ - Output Capacitance: 193 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
Package: POWERFLAT5X6ADI
STL60N32N3LL substitution
STL60N32N3LL Datasheet (PDF)
stl60n32n3ll.pdf

STL60N32N3LLDual N-channel 30 V, 0.005 , 15 A PowerFLAT 5x6asymmetrical double island, STripFET Power MOSFETFeaturesOrder code VDSS RDS(on) ID4Q1 30 V
stl60n3llh5.pdf

STL60N3LLH5N-channel 30 V, 0.0063 , 17 A PowerFLAT (5x6)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL60N3LLH5 30 V
stl60nh3ll.pdf

STL60NH3LLN-channel 30 V - 0.0065 - 30 A - PowerFLAT (6x5)ultra low gate charge STripFET Power MOSFETFeaturesRDS(on)Type VDSS ID(max)STL60NH3LL 30V
stl60n10f7.pdf

STL60N10F7N-channel 100 V, 0.0145 typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTL60N10F7 100 V 0.018 12 A 5 W1234 Ultra low on-resistance 100% avalanche testedPowerFLAT 5x6 Applications Switching applicationsDescriptionFigure 1. Intern
Datasheet: STL26NM60N , STL32N55M5 , STL35N15F3 , STL40DN3LLH5 , STL42N65M5 , STL50N3LLH5 , STL52N25M5 , STL56N3LLH5 , IRFZ48N , STL60N3LLH5 , STL65DN3LLH5 , STL65N3LLH5 , STL70N2LLH5 , STL70N4LLF5 , STL75N3LLZH5 , STL75N8LF6 , STL7NM60N .
History: TPB65R070D | NCE1205 | LPM9040A | SM1F12NSKP | HM4444 | TK65S04K3L | IXTQ10P50P
Keywords - STL60N32N3LL MOSFET datasheet
STL60N32N3LL cross reference
STL60N32N3LL equivalent finder
STL60N32N3LL lookup
STL60N32N3LL substitution
STL60N32N3LL replacement
History: TPB65R070D | NCE1205 | LPM9040A | SM1F12NSKP | HM4444 | TK65S04K3L | IXTQ10P50P



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