STL60N32N3LL Specs and Replacement

Type Designator: STL60N32N3LL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.6 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm

Package: POWERFLAT5X6ADI

STL60N32N3LL substitution

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STL60N32N3LL datasheet

 ..1. Size:1420K  st
 stl60n32n3ll.pdf pdf_icon

STL60N32N3LL

STL60N32N3LL Dual N-channel 30 V, 0.005 , 15 A PowerFLAT 5x6 asymmetrical double island, STripFET Power MOSFET Features Order code VDSS RDS(on) ID 4 Q1 30 V ... See More ⇒

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 stl60n3llh5.pdf pdf_icon

STL60N32N3LL

STL60N3LLH5 N-channel 30 V, 0.0063 , 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STL60N3LLH5 30 V ... See More ⇒

 8.1. Size:384K  st
 stl60nh3ll.pdf pdf_icon

STL60N32N3LL

STL60NH3LL N-channel 30 V - 0.0065 - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET Features RDS(on) Type VDSS ID (max) STL60NH3LL 30V ... See More ⇒

 8.2. Size:1280K  st
 stl60n10f7.pdf pdf_icon

STL60N32N3LL

STL60N10F7 N-channel 100 V, 0.0145 typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features RDS(on) Order code VDS max ID PTOT STL60N10F7 100 V 0.018 12 A 5 W 1 2 3 4 Ultra low on-resistance 100% avalanche tested PowerFLAT 5x6 Applications Switching applications Description Figure 1. Intern... See More ⇒

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Detailed specifications: STL26NM60N, STL32N55M5, STL35N15F3, STL40DN3LLH5, STL42N65M5, STL50N3LLH5, STL52N25M5, STL56N3LLH5, STP65NF06, STL60N3LLH5, STL65DN3LLH5, STL65N3LLH5, STL70N2LLH5, STL70N4LLF5, STL75N3LLZH5, STL75N8LF6, STL7NM60N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.