All MOSFET. STL60N32N3LL Datasheet

 

STL60N32N3LL MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL60N32N3LL
   Marking Code: 60N32N3LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id|ⓘ - Maximum Drain Current: 13.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.6 nC
   trⓘ - Rise Time: 15.6 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: POWERFLAT5X6ADI

 STL60N32N3LL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL60N32N3LL Datasheet (PDF)

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 stl60n32n3ll.pdf

STL60N32N3LL STL60N32N3LL

STL60N32N3LLDual N-channel 30 V, 0.005 , 15 A PowerFLAT 5x6asymmetrical double island, STripFET Power MOSFETFeaturesOrder code VDSS RDS(on) ID4Q1 30 V

 7.1. Size:583K  st
 stl60n3llh5.pdf

STL60N32N3LL STL60N32N3LL

STL60N3LLH5N-channel 30 V, 0.0063 , 17 A PowerFLAT (5x6)STripFET V Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL60N3LLH5 30 V

 8.1. Size:384K  st
 stl60nh3ll.pdf

STL60N32N3LL STL60N32N3LL

STL60NH3LLN-channel 30 V - 0.0065 - 30 A - PowerFLAT (6x5)ultra low gate charge STripFET Power MOSFETFeaturesRDS(on)Type VDSS ID(max)STL60NH3LL 30V

 8.2. Size:1280K  st
 stl60n10f7.pdf

STL60N32N3LL STL60N32N3LL

STL60N10F7N-channel 100 V, 0.0145 typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTL60N10F7 100 V 0.018 12 A 5 W1234 Ultra low on-resistance 100% avalanche testedPowerFLAT 5x6 Applications Switching applicationsDescriptionFigure 1. Intern

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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