STL80N75F6 Specs and Replacement
Type Designator: STL80N75F6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 530 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: POWERFLAT5X6
STL80N75F6 substitution
- MOSFET ⓘ Cross-Reference Search
STL80N75F6 datasheet
stl80n75f6.pdf
STL80N75F6 N-channel 75 V, 4.5 m typ., 18 A STripFET F6 Power MOSFET in PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID STL80N75F6 75 V 5.5 m 18 A Very low on-resistance 1 2 3 Very low gate charge 4 High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss Applications Switching applications Fi... See More ⇒
stl80n4llf3.pdf
STL80N4LLF3 N-channel 40V - 0.0042 - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V ... See More ⇒
stl80n3llh6.pdf
STL80N3LLH6 N-channel 30 V, 0.0046 , 21 A PowerFLAT (5x6) STripFET VI DeepGATE Power MOSFET Preliminary data Features RDS(on) Type VDSS ID max STL80N3LLH6 30 V 0.0052 21 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLAT ( 5x6 ) High avalanche ruggedness Low gate drive powe... See More ⇒
Detailed specifications: STL65N3LLH5, STL70N2LLH5, STL70N4LLF5, STL75N3LLZH5, STL75N8LF6, STL7NM60N, STL80N3LLH6, STL80N4LLF3, EMB04N03H, STL85N6F3, STL8N65M5, STL90N3LLH6, STL9N3LLH5, STN1HNK60, STN1N20, STN1NF10, STN1NK60Z
Keywords - STL80N75F6 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
