STL90N3LLH6 Specs and Replacement

Type Designator: STL90N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: POWERFLAT5X6

STL90N3LLH6 substitution

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STL90N3LLH6 datasheet

 ..1. Size:668K  st
 stl90n3llh6.pdf pdf_icon

STL90N3LLH6

STL90N3LLH6 N-channel 30 V, 0.0038 , 24 A PowerFLAT (5x6) STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STL90N3LLH6 30 V 0.0045 24 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT ( 5x6 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Ver... See More ⇒

 8.1. Size:375K  st
 stl90n6f7.pdf pdf_icon

STL90N3LLH6

STL90N6F7 N-channel 60 V, 0.0046 typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) D STL90N6F7 60 V 0.0054 90 A 1 2 3 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High avalanche rugg... See More ⇒

 8.2. Size:445K  st
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STL90N3LLH6

STL90N10F7 N-channel 100 V, 0.007 typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL90N10F7 100 V 0.008 70 A 100 W 1 2 3 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High... See More ⇒

Detailed specifications: STL75N3LLZH5, STL75N8LF6, STL7NM60N, STL80N3LLH6, STL80N4LLF3, STL80N75F6, STL85N6F3, STL8N65M5, AOD4184A, STL9N3LLH5, STN1HNK60, STN1N20, STN1NF10, STN1NK60Z, STN1NK80Z, STN2NF10, STN3N40K3

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