All MOSFET. STL90N3LLH6 Datasheet

 

STL90N3LLH6 Datasheet and Replacement


   Type Designator: STL90N3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: POWERFLAT5X6
 

 STL90N3LLH6 substitution

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STL90N3LLH6 Datasheet (PDF)

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STL90N3LLH6

STL90N3LLH6N-channel 30 V, 0.0038 , 24 A PowerFLAT (5x6)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL90N3LLH6 30 V 0.0045 24 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 5x6 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Ver

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stl90n6f7.pdf pdf_icon

STL90N3LLH6

STL90N6F7 N-channel 60 V, 0.0046 typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) DSTL90N6F7 60 V 0.0054 90 A 123 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High avalanche rugg

 8.2. Size:445K  st
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STL90N3LLH6

STL90N10F7 N-channel 100 V, 0.007 typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTL90N10F7 100 V 0.008 70 A 100 W 123 Among the lowest RDS(on) on the market 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity PowerFLAT 5x6 High

Datasheet: STL75N3LLZH5 , STL75N8LF6 , STL7NM60N , STL80N3LLH6 , STL80N4LLF3 , STL80N75F6 , STL85N6F3 , STL8N65M5 , HY1906P , STL9N3LLH5 , STN1HNK60 , STN1N20 , STN1NF10 , STN1NK60Z , STN1NK80Z , STN2NF10 , STN3N40K3 .

History: LBSS84WT1G | APM2323AAC | BL13N25-D

Keywords - STL90N3LLH6 MOSFET datasheet

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