All MOSFET. STN1HNK60 Datasheet

 

STN1HNK60 Datasheet and Replacement


   Type Designator: STN1HNK60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 23.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: SOT223
 

 STN1HNK60 substitution

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STN1HNK60 Datasheet (PDF)

 ..1. Size:466K  st
 stn1hnk60 stq1hnk60r-ap.pdf pdf_icon

STN1HNK60

STN1HNK60, STQ1HNK60R-APDatasheetN-channel 600 V, 7.3 typ., 0.4 A SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages4 Features231VDS RDS(on) max. IDOrder code PackageSOT-223STN1HNK60 SOT-223600 V 8.5 0.4 ASTQ1HNK60R-AP TO-92 Extremely high dv/dt capability 100% avalanche tested32 Gate charge minimized1TO-92 (Ammopack)D(2, 4)Appli

 ..2. Size:424K  st
 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf pdf_icon

STN1HNK60

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

 ..3. Size:427K  st
 std1nk60-1 std1nk60t4 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf pdf_icon

STN1HNK60

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

 8.1. Size:260K  st
 stn1hnc60.pdf pdf_icon

STN1HNK60

STN1HNC60N-CHANNEL 600V - 7 - 0.4A - SOT-223PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTN1HNC60 600 V

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Datasheet: STL7NM60N , STL80N3LLH6 , STL80N4LLF3 , STL80N75F6 , STL85N6F3 , STL8N65M5 , STL90N3LLH6 , STL9N3LLH5 , 60N06 , STN1N20 , STN1NF10 , STN1NK60Z , STN1NK80Z , STN2NF10 , STN3N40K3 , STN3N45K3 , STN3NF06 .

History: OSG60R200PSZF | SWF4N80K | IRFI9Z34N | SWI7N70K

Keywords - STN1HNK60 MOSFET datasheet

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